ExtendedInGaAs photodiode

The nature of the pyroelectric effect is that in a highly-ordered crystal (or ceramic), a temperature change in the element causes its atoms to move slightly out of position. This rearranges its electrical charge, which is measured in the electrodes on its surface.

InGaAs photodioderesponsivity

A pyroelectric IR detector is a thermal detector in that it responds to the change in heat (IR) absorbed on its surface. Thermal detectors are polychromatic with a very wide spectral bandwidth.

Siliconphotodiode

IR photodiodes with an emphasis on quantum efficiency: LASER COMPONENTS develops and manufactures photodiodes in the spectral range of up to 2600 nm.

In addition to the industry standard sizes of 1 mm and 2 mm, we also have an in-between active area size available: 1.3 mm. This makes it possible to package the photodiode in a TO-46 housing (with a base diameter of 5.3 mm), delivering 70% more signal in  the same housing dimensions compared to a photodiode with an active area of 1 mm.

Active diameters from 0.25 mm to 3 mm are available as standard, and are available in hermetically-sealed TO housings with or without an integrated Peltier cooler, as an SMD, on a ceramic mount, or simply as a chip.

Ingaas photodiodeprice

The pyroelectric effect is found in many materials.  The most commonly-used materials are deuterated lanthanum α alanine-doped triglycine sulfate (DLaTGS) and lithium tantalate (LTO).

InGaAs Photodiodethorlabs

PbS is a standard SWIR semiconductor detector (1 - 3.3 µm) whereas PbSe is used in the MWIR range (1 - 4.7 µm when uncooled; up to 5.2 µm when cooled). Our lead salt detectors are photoconductive; the detector resistance is reduced during illumination. The crystal structure is polycrystalline and is produced via chemical deposition.

Modern InGaAs PIN photodiodes are panchromatic and convert broadband light to photocurrents in the Vis-NIR range. Concretely speaking, this means a sensitivity range from 500 nm to 1700 nm for regular InGaAs and – in increments – up to 2600 nm for extended InGaAs. Variations for data transmission are not panchromatic.

LASER COMPONENTS produces photodiodes in house at our production facility in Arizona. They have been available on the market since 2013 and offer a strong cost-performance ratio.

This product portfolio was designed with great attention to detail: One of our most obvious features is the panchromatic nature of all of our InGaAs photodiodes, providing detection down to 500 nm. Further advantages include a lower temperature coefficient and a reduced off-area sensitivity.