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Avalanche photodiodeconstruction and working

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Avalanche photodiodeworking principle

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Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, China

Glass molded fly-eye lens is composed of a lot of small lenslets which are  are packed in parallel or hexagonally so that the transmitted light could be distributed uniformly. The key to achieving uniform illumination with a double-row fly-eye lens array is to improve its uniformity and illuminative brightness. Plastic fly-eye lens is prone to aging.  Because of its excellent heat resistance and re liability glass molded fly-eye lenses are widely used in projectors.

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Advantages ofavalanche photodiode

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Avalanche Photodiodeprice

Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.

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Avalanche photodiodes (APDs) have enabled highly sensitive photodetection in optical communication, sensing and quantum applications. Great efforts have been focused on improving their gain–bandwidth product (GBP). However, further advance has encountered enormous barriers due to incomplete consideration of the avalanche process. Here we implement a germanium/silicon APD with the GBP breaking through 1 THz. The performance is achieved by introducing two cooperative strategies: precisely shaping the electric field distribution and elaborately engineering the resonant effect in the avalanche process. Experimentally, the presented APD has a primary responsivity of 0.87 A W−1 at unity gain, a large bandwidth of 53 GHz in the gain range of 9–19.5 and an ultrahigh GBP of 1,033 GHz under −8.6 V and at 1,550 nm. For demonstration, data reception of 112 Gb s−1 on–off keying and 200 Gb s−1 four-level pulse amplitude modulation signals per wavelength are achieved with clear eye diagrams and high sensitivity, as well as 800 G reception via four channels. This work provides a potential successor for high-speed optoelectronic devices in next-generation optical interconnects.

Yi, X. et al. Extremely low excess noise and high sensitivity AlAs0. 56Sb0. 44 avalanche photodiodes. Nat. Photonics 13, 683–686 (2019).

Applications ofavalanche photodiode

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Xiang, Y., Cao, H., Liu, C., Guo, J. & Dai, D. High-speed waveguide Ge/Si avalanche photodiode with a gain–bandwidth product of 615 GHz. Optica 9, 762–769 (2022).

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The data that support the findings of this study are available from the figures and from the corresponding authors on reasonable request.

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Zeng, Q. et al. Space charge effects on the bandwidth of Ge/Si avalanche photodetectors. Semicond. Sci. Tech. 35, 035026 (2020).

This work was supported by National Key Research and Development Program of China (2019YFB1803801 received by Y.Y.), National Natural Science Foundation of China (61922034 and 62135004 received by Y.Y.), Key Research and Development Program of Hubei Province (2021BAA005 received by Y.Y.), Innovation Project of Optics Valley Laboratory (OVL2021BG005 received by Y.Y. and X.Z.) and Program for HUST Academic Frontier Youth Team (2018QYTD08 received by Y.Y.).

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March, S. D., Jones, A. H., Campbell, J. C. & Bank, S. R. Multistep staircase avalanche photodiodes with extremely low noise and deterministic amplification. Nat. Photonics 15, 468–474 (2021).

What is avalanche photodiodevsphotodiode

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Avalanche photodiodePDF

Shi, Y., Li, X., Chen, G. et al. Avalanche photodiode with ultrahigh gain–bandwidth product of 1,033 GHz. Nat. Photon. 18, 610–616 (2024). https://doi.org/10.1038/s41566-024-01421-2

What is avalanche photodiodeformula

Nada, M., Yamada, Y. & Matsuzaki, H. Responsivity–bandwidth limit of avalanche photodiodes: toward future ethernet systems. IEEE J. Sel. Top. Quant. 24, 1–11 (2017).

Wang, B. et al. 64 Gb/s low-voltage waveguide SiGe avalanche photodiodes with distributed Bragg reflectors. Photonics Res. 8, 1118–1123, (2020).

Y.S. and Y.Y. jointly conceived the idea. Y.S. conducted simulation and designed the device. X.L. designed the equalization algorithm for high-speed signal reception. G.C. dealt with the chip fabrication. Y.S., M.Z. and H.C. performed the experiments. All authors contributed to the discussion of experimental results. Y.S. and Y.Y. wrote the manuscript with contributions from all co-authors. Y.Y. and X.Z. supervised and coordinated all the work.

Duan, N., Liow, T.-Y., Lim, A. E.-J., Ding, L. & Lo, G. 310 GHz gain–bandwidth product Ge/Si avalanche photodetector for 1550 nm light detection. Opt. Express 20, 11031–11036, (2012).

Zeng, X. et al. Silicon–germanium avalanche photodiodes with direct control of electric field in charge multiplication region. Optica 6, 772–777, (2019).

Srinivasan, S. A. et al. 27 GHz silicon-contacted waveguide-coupled Ge/Si avalanche photodiode. J. Lightwave Technol. 38, 3044–3050 (2020).

Guo, B. et al. Temperature dependence of avalanche breakdown of AlGaAsSb and AlInAsSb avalanche photodiodes. J. Lightwave Technol. 40, 5934–5942 (2022).

Auxcelar® is a registered trademark of Henan Auxcelar Technologies Co., Ltd in China and may be registered in other countries. Copyright © 2023 Auxcelar Technologies Co., Ltd

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