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Band passfilter calculator

Knowles DLI brand microstrip bandpass filters offer classical filter topologies yielding excellent performance in a small footprint when fabricated on ceramic substrate materials. Miniaturization can reach new levels by employing DLI high-k ceramic materials. Different techniques are employed to realize small size and high performance. Catalog devices come complete with integrated shielding and the surface mount versions are designed for use on most RF PWB materials. Typical features include center frequency from C to above Ka band although custom devices are avaliable from 1 to 60 GHz. Bandpass filters pass desired frequency range and suppress the rest of undesired spectrum. Designed from 800MHz to 67GHz.

Lee, J., Kim, S. -H., Kwen, H., Jang, J., Chang, S., Park, J., Lee, S. -J., & Shin, J. -K. (2020). CMOS Depth Image Sensor with Offset Pixel Aperture Using a Back-Side Illumination Structure for Improving Disparity. Sensors, 20(18), 5138. https://doi.org/10.3390/s20185138

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Lee, J.; Kim, S.-H.; Kwen, H.; Jang, J.; Chang, S.; Park, J.; Lee, S.-J.; Shin, J.-K. CMOS Depth Image Sensor with Offset Pixel Aperture Using a Back-Side Illumination Structure for Improving Disparity. Sensors 2020, 20, 5138. https://doi.org/10.3390/s20185138

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Lee, Jimin, Sang-Hwan Kim, Hyeunwoo Kwen, Juneyoung Jang, Seunghyuk Chang, JongHo Park, Sang-Jin Lee, and Jang-Kyoo Shin. 2020. "CMOS Depth Image Sensor with Offset Pixel Aperture Using a Back-Side Illumination Structure for Improving Disparity" Sensors 20, no. 18: 5138. https://doi.org/10.3390/s20185138

Editor’s Choice articles are based on recommendations by the scientific editors of MDPI journals from around the world. Editors select a small number of articles recently published in the journal that they believe will be particularly interesting to readers, or important in the respective research area. The aim is to provide a snapshot of some of the most exciting work published in the various research areas of the journal.

Lee J, Kim S-H, Kwen H, Jang J, Chang S, Park J, Lee S-J, Shin J-K. CMOS Depth Image Sensor with Offset Pixel Aperture Using a Back-Side Illumination Structure for Improving Disparity. Sensors. 2020; 20(18):5138. https://doi.org/10.3390/s20185138

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Abstract: This paper presents a CMOS depth image sensor with offset pixel aperture (OPA) using a back-side illumination structure to improve disparity. The OPA method is an efficient way to obtain depth information with a single image sensor without additional external factors. Two types of apertures (i.e., left-OPA (LOPA) and right-OPA (ROPA)) are applied to pixels. The depth information is obtained from the disparity caused by the phase difference between the LOPA and ROPA images. In a CMOS depth image sensor with OPA, disparity is important information. Improving disparity is an easy way of improving the performance of the CMOS depth image sensor with OPA. Disparity is affected by pixel height. Therefore, this paper compared two CMOS depth image sensors with OPA using front-side illumination (FSI) and back-side illumination (BSI) structures. As FSI and BSI chips are fabricated via different processes, two similar chips were used for measurement by calculating the ratio of the OPA offset to pixel size. Both chips were evaluated for chief ray angle (CRA) and disparity in the same measurement environment. Experimental results were then compared and analyzed for the two CMOS depth image sensors with OPA. Keywords: offset pixel aperture; CMOS depth image sensor; back-side illumination structure; improving disparity

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